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Effects of Substrate-incident Ions on Reactively Sputtered TiO_2 Film Growth
https://doi.org/10.57375/00000547
https://doi.org/10.57375/000005474dd6b413-d0e5-4266-856c-4f5a7f660cca
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00004766979.pdf (526.9 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2009-04-04 | |||||
| タイトル | ||||||
| タイトル | Effects of Substrate-incident Ions on Reactively Sputtered TiO_2 Film Growth | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ID登録 | ||||||
| ID登録 | 10.57375/00000547 | |||||
| ID登録タイプ | JaLC | |||||
| 著者 |
Shibata, Akira
× Shibata, Akira |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In this study, effects of RF magnetron sputtering with auxiliary permanent magnet were investigated. The auxiliary magnet was installed under the grounded electrode and the magnetic field strength was intensified in whole discharge space. Growth of the rutile TiO_2 films with high refractive index which is equal to bulk TiO_2 crystal was achieved using supposed sputtering apparatus. Mass analysis of substrate- incident ion showed that Ar^+ and O^+ current increased in the discharge with auxiliary magnet. Kinetic energy distribution of substrate-incident Ar^+ shifted to higher energy compared to conventional discharge. The obtained films showed rutile polycrystalline structure and quite fine surface morphology indicating higher densification of the films. | |||||
| 書誌情報 |
福井工業大学研究紀要. 第一部 号 37, p. 295-302, 発行日 2007-05-31 |
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| 出版者 | ||||||
| 出版者 | 福井工業大学 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2868571 | |||||
| 書誌レコードID | ||||||
| 識別子タイプ | NCID | |||||
| 関連識別子 | TF00009006 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
