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フラワー状InNの結晶成長メカニズム
https://doi.org/10.57375/00000325
https://doi.org/10.57375/00000325a1578e57-8284-4f21-bedc-580b5bcdffd7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00004766967.pdf (428.0 kB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2009-04-04 | |||||
| タイトル | ||||||
| タイトル | フラワー状InNの結晶成長メカニズム | |||||
| タイトル | ||||||
| タイトル | Crystal growth mechanism of flower-like InN | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ID登録 | ||||||
| ID登録 | 10.57375/00000325 | |||||
| ID登録タイプ | JaLC | |||||
| 著者 |
高橋, 直行
× 高橋, 直行× Takahashi, Naoyuki |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Indium nitride prepared under atmospheric pressure using a halide chemical vapour deposition method has been examined by means of a variety of analytical techniques. From the scanning electron microscopic observations of the crystals deposited onto a Si(100) substrate, it was found that they have flower-like morphology. Based on the electron diffraction and X-ray photoelectron spectroscopic analyses, it was deduced that the flower-like InN crystals have a stoichiometry close to In : N=1 : 1. Transmission electron diffraction and selected area electron diffraction images showed that each petal and style constituting the flower are of single crystals form with staggered hexagonal bipyramidal structure. Furthermore, it was found that the flower-like InN was formed by the special crystal growth by high-resolution X-ray diffraction (HR-XRD). | |||||
| 書誌情報 |
福井工業大学研究紀要. 第一部 号 37, p. 219-224, 発行日 2007-05-31 |
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| 出版者 | ||||||
| 出版者 | 福井工業大学 | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 2868571 | |||||
| 書誌レコードID | ||||||
| 識別子タイプ | NCID | |||||
| 関連識別子 | TF00008784 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
