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減圧沸騰噴霧を適用した新気化供給法の提案 -HfO2膜表面構造におよぼす噴射量の影響-
https://doi.org/10.57375/00001026
https://doi.org/10.57375/000010268b16932b-8ba3-4e4f-88ad-e74bb538faee
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
kiyou4016.pdf (6.7 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2010-07-27 | |||||
| タイトル | ||||||
| タイトル | 減圧沸騰噴霧を適用した新気化供給法の提案 -HfO2膜表面構造におよぼす噴射量の影響- | |||||
| タイトル | ||||||
| タイトル | Proposal of New Supplying Evaporation Precursor Method with CVD by Using Mixed Solution – Relation between HfO2 Film Surface Condition and Injection Quantity – | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | CVD | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | flash boiling spray | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | HfO2 | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | SEM | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | TEMAHf | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ID登録 | ||||||
| ID登録 | 10.57375/00001026 | |||||
| ID登録タイプ | JaLC | |||||
| 著者 |
大嶋, 元啓
× 大嶋, 元啓× 千田, 二郎× 石田, 耕三× OSHIMA, Motohiro× SENDA, Jiro× ISHIDA, Kozo |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The authors proposed a novel chemical vapor deposition system, a new evaporation supply method by using flash boiling spray, to improve several kinds of problems such as decomposition of precursor at supply line and evaporator. In this method, liquid precursors are supplied directly to vacuum chamber thorough an injector without vaporizers. The technique to improve the vaporization of pressure is proposed by mixing a higher saturated vapor pressure organic solvent because the saturated pressure of precursor is very low. In this paper, relation between film surface condition and injection quantity was investigated. Tetraethyl methyl amino hafnium and n-pentane were used as mixed solution, and HfO2 film was deposited on Si substrate by using this method. As a result, the film surface roughness and grain size are increased as increasing injection quantity. | |||||
| 書誌情報 |
福井工業大学研究紀要 号 40, p. 125-131, 発行日 2010-06-30 |
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| 出版者 | ||||||
| 出版者 | 福井工業大学 | |||||
| 書誌レコードID | ||||||
| 識別子タイプ | NCID | |||||
| 関連識別子 | TF00009485 | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
