{"created":"2023-06-20T13:43:10.918056+00:00","id":864,"links":{},"metadata":{"_buckets":{"deposit":"4b48a11e-5da0-43d0-b63c-fd89cad76265"},"_deposit":{"created_by":2,"id":"864","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"864"},"status":"published"},"_oai":{"id":"oai:fut.repo.nii.ac.jp:00000864","sets":["1"]},"author_link":["11458","11457"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-03-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"36","bibliographicPageEnd":"32","bibliographicPageStart":"25","bibliographic_titles":[{"bibliographic_title":"福井工業大学研究紀要. 第一部"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Band splitting and localized states of diamond and silicon crystals are investigated with the use of the first principle calculation. In the diamond crystal a band splitting was observed for the band edge of both the conduction and the valence band. By the introduction of the large strain localized states were induced besides the band splitting. In the silicon crystal the width of a band split was dependent on the size and the direction of the strain. Namely, two kinds of the strain induced a different band splitting in the energy band.","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.57375/00000858","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福井工業大学"}]},"item_10002_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TF00009317","subitem_relation_type_select":"NCID"}}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2868571","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"岸野, 正剛"}],"nameIdentifiers":[{"nameIdentifier":"11457","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kishino, Seigo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11458","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-04-12"}],"displaytype":"detail","filename":"KJ00004437916.pdf","filesize":[{"value":"865.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004437916.pdf","url":"https://fut.repo.nii.ac.jp/record/864/files/KJ00004437916.pdf"},"version_id":"ddaec7ea-93ec-43f0-8674-217541a82d5d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"歪みを導入した半導体のバンドスプリットと局在準位","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"歪みを導入した半導体のバンドスプリットと局在準位"},{"subitem_title":"Strain-induced band splitting and localized states of semiconductor","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-04-04"},"publish_date":"2009-04-04","publish_status":"0","recid":"864","relation_version_is_last":true,"title":["歪みを導入した半導体のバンドスプリットと局在準位"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-20T14:23:40.094937+00:00"}