{"created":"2023-06-20T13:42:49.826822+00:00","id":411,"links":{},"metadata":{"_buckets":{"deposit":"f842e464-fa36-47f1-884d-1d7be371e808"},"_deposit":{"created_by":2,"id":"411","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"411"},"status":"published"},"_oai":{"id":"oai:fut.repo.nii.ac.jp:00000411","sets":["1"]},"author_link":["9865","9866"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-03-18","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"35","bibliographicPageEnd":"230","bibliographicPageStart":"223","bibliographic_titles":[{"bibliographic_title":"福井工業大学研究紀要. 第一部"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Dependence of the rate constants for electron attachiment to CHCI, on mean electron energy from thermal to about 2 eV have been investigated at ambient temperatures between 223 and 600 K using the pulse-radiolysis microwave cavity method combined with microwave heating. The rate constant at thermal energy incrases prominently with temperature with an ativation energy of 0.13 ±0.01eV which is obtained by Arrhenius plot of the present rate constants. The atachiment cross sections obtained by unfolding the rate constants show two peaks at 0 and 0.8 eV at 223 K, but a peak observed at 0.8 eV at 223 K cannnot be seen at 600 K. The importance of vibrationally excited states in the deformation mode of CHCI_3 has been proposed to interpret the cross sections observed at 600 K.","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.57375/00000405","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福井工業大学"}]},"item_10002_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TF00008864","subitem_relation_type_select":"NCID"}}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2868571","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"砂川, 武義"}],"nameIdentifiers":[{"nameIdentifier":"9865","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sunagawa, Takeyoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"9866","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-04-12"}],"displaytype":"detail","filename":"KJ00004179118.pdf","filesize":[{"value":"577.3 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00004179118.pdf","url":"https://fut.repo.nii.ac.jp/record/411/files/KJ00004179118.pdf"},"version_id":"2913c433-f606-4605-abc6-f15933fddf7a"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ハロゲン化合物の低エネルギー電子付着過程における媒体温度効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ハロゲン化合物の低エネルギー電子付着過程における媒体温度効果"},{"subitem_title":"Effect of ambient temperature on low-energy electron attachiment to halogenated compound","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-04-04"},"publish_date":"2009-04-04","publish_status":"0","recid":"411","relation_version_is_last":true,"title":["ハロゲン化合物の低エネルギー電子付着過程における媒体温度効果"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-20T14:33:04.212439+00:00"}