{"created":"2023-06-20T13:42:36.642370+00:00","id":145,"links":{},"metadata":{"_buckets":{"deposit":"41b4a201-2576-4fb4-8ee8-4e605ca2362d"},"_deposit":{"created_by":2,"id":"145","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"145"},"status":"published"},"_oai":{"id":"oai:fut.repo.nii.ac.jp:00000145","sets":["1"]},"author_link":["8955","8958","8954","8959","8957","8956"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-07-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"41","bibliographicPageEnd":"38","bibliographicPageStart":"33","bibliographic_titles":[{"bibliographic_title":"福井工業大学研究紀要"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"β-Ga2O3 single crystal is promising for the substrate of GaN LED. The single crystals were grown by using Floating Zone method. Doping of Si revealed possibilities of suppressing the cracking along cleavage plane and reducing the electrical resistivity, which were essential to the practical use. EL device by using Cr-dopedβ-Ga2O3 showed the electro luminescence at the wave length of around 690 nm under higher than 80 voltage.","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.57375/00000139","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福井工業大学"}]},"item_10002_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TF00008598","subitem_relation_type_select":"NCID"}}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"龍見, 雅美"}],"nameIdentifiers":[{"nameIdentifier":"8954","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"川田, 真聖"}],"nameIdentifiers":[{"nameIdentifier":"8955","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"織田, 隆大"}],"nameIdentifiers":[{"nameIdentifier":"8956","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tatsumi, Masami","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8957","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawada, Masahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8958","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oda, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8959","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-04-12"}],"displaytype":"detail","filename":"kiyou4105.pdf","filesize":[{"value":"4.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kiyou4105.pdf","url":"https://fut.repo.nii.ac.jp/record/145/files/kiyou4105.pdf"},"version_id":"b7c72228-bc46-46f2-a364-a88a21c77fc8"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Diesel Engine","subitem_subject_scheme":"Other"},{"subitem_subject":"Bio Diesel Fuel","subitem_subject_scheme":"Other"},{"subitem_subject":"Emulsified Fuel","subitem_subject_scheme":"Other"},{"subitem_subject":"Exhaust Gas","subitem_subject_scheme":"Other"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ga2O3単結晶の育成と特性評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ga2O3単結晶の育成と特性評価"},{"subitem_title":"GROWTH AND EVALUATION OF Ga2O3 SINGLE CRYSTAL","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-07-31"},"publish_date":"2011-07-31","publish_status":"0","recid":"145","relation_version_is_last":true,"title":["Ga2O3単結晶の育成と特性評価"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-20T14:39:08.134243+00:00"}