{"created":"2023-06-20T13:43:22.103522+00:00","id":1102,"links":{},"metadata":{"_buckets":{"deposit":"03eeb75c-fc54-4ed4-bd2c-768bb7a6ec12"},"_deposit":{"created_by":2,"id":"1102","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"1102"},"status":"published"},"_oai":{"id":"oai:fut.repo.nii.ac.jp:00001102","sets":["1"]},"author_link":["12471","12475","12472","12474","12470","12473"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-06-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"40","bibliographicPageEnd":"44","bibliographicPageStart":"40","bibliographic_titles":[{"bibliographic_title":"福井工業大学研究紀要"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single crystals of β-Ga2O3 for substrates of GaN LED were grown by Floating Zone(FZ) method. The transparent single crystals of 5-6 mm in diameter were reproducibly obtained by applying necking procedure and the preferential growth direction was <010>. Many cracks were induced along the cleavage plane of (100) in slicing process, which is related to thermal stress and the growth direction. However, this preliminary growth experiments suggested that β-Ga2O3 single crystal is promising as a substrate of GaN LED.","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.57375/00001096","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福井工業大学"}]},"item_10002_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TF00009555","subitem_relation_type_select":"NCID"}}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"龍見, 雅美"}],"nameIdentifiers":[{"nameIdentifier":"12470","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小池, 裕之"}],"nameIdentifiers":[{"nameIdentifier":"12471","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"市木, 伸明"}],"nameIdentifiers":[{"nameIdentifier":"12472","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tatsumi, Masami","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12473","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Koike, Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12474","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ichiki, Nobuaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12475","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-04-12"}],"displaytype":"detail","filename":"kiyou4006.pdf","filesize":[{"value":"3.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"kiyou4006.pdf","url":"https://fut.repo.nii.ac.jp/record/1102/files/kiyou4006.pdf"},"version_id":"023badb2-0499-4d34-b10d-9b9164add478"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"β-Ga2O3","subitem_subject_scheme":"Other"},{"subitem_subject":"Single crystal","subitem_subject_scheme":"Other"},{"subitem_subject":"FZ","subitem_subject_scheme":"Other"},{"subitem_subject":"LED","subitem_subject_scheme":"Other"},{"subitem_subject":"substrate","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ga2O3単結晶の育成","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ga2O3単結晶の育成"},{"subitem_title":"Growth of Ga2O3 single crystal","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2010-08-01"},"publish_date":"2010-08-01","publish_status":"0","recid":"1102","relation_version_is_last":true,"title":["Ga2O3単結晶の育成"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-20T14:19:56.678405+00:00"}