{"created":"2023-06-20T13:43:21.148149+00:00","id":1086,"links":{},"metadata":{"_buckets":{"deposit":"4998374a-16d3-4985-be9f-b29b8384a5df"},"_deposit":{"created_by":2,"id":"1086","owners":[2],"pid":{"revision_id":0,"type":"depid","value":"1086"},"status":"published"},"_oai":{"id":"oai:fut.repo.nii.ac.jp:00001086","sets":["1"]},"author_link":["12409","12406","12410","12407","12411","12408"],"item_10002_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-05-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"38","bibliographicPageEnd":"312","bibliographicPageStart":"305","bibliographic_titles":[{"bibliographic_title":"福井工業大学研究紀要. 第一部"}]}]},"item_10002_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"\"Irradiation of particles such as protons and neutrons does various damages to light emitting devices. In semiconductor lasers, the most important effect is an increase in threshold current. This effect is characterized as the threshold current damage factor K_I. Dependence of K_I on incident particle energy and materials of active regions is discussed using non-ionizing energy loss (NIEL) and displacement energy. Furthermore, K_I is discussed taking account of a decrease in carrier lifetime due to non-radiative centers (defects) introduced by irradiation of particles.\"","subitem_description_type":"Abstract"}]},"item_10002_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.57375/00001080","subitem_identifier_reg_type":"JaLC"}]},"item_10002_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"福井工業大学"}]},"item_10002_relation_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"TF00009539","subitem_relation_type_select":"NCID"}}]},"item_10002_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2868571","subitem_source_identifier_type":"ISSN"}]},"item_10002_version_type_20":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"權田, 俊一"}],"nameIdentifiers":[{"nameIdentifier":"12406","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"森田, 剛徳"}],"nameIdentifiers":[{"nameIdentifier":"12407","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"菅, 博文"}],"nameIdentifiers":[{"nameIdentifier":"12408","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gonda, Shun-ichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12409","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Morita, Takenori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12410","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kan, Hirofumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12411","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2023-04-12"}],"displaytype":"detail","filename":"KJ00005074548.pdf","filesize":[{"value":"630.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00005074548.pdf","url":"https://fut.repo.nii.ac.jp/record/1086/files/KJ00005074548.pdf"},"version_id":"c77483ef-352c-42db-814d-fa5fe2538f45"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"半導体発光デバイスの放射線照射損傷","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"半導体発光デバイスの放射線照射損傷"},{"subitem_title":"Radiation Damage in Semiconductor Light Emitting Devices","subitem_title_language":"en"}]},"item_type_id":"10002","owner":"2","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2009-03-23"},"publish_date":"2009-03-23","publish_status":"0","recid":"1086","relation_version_is_last":true,"title":["半導体発光デバイスの放射線照射損傷"],"weko_creator_id":"2","weko_shared_id":-1},"updated":"2023-06-20T14:20:11.154910+00:00"}