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        <datestamp>2023-06-20T14:20:56Z</datestamp>
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          <dc:title>減圧沸騰噴霧を適用した新気化供給法の提案 -HfO2膜表面構造におよぼす噴射量の影響-</dc:title>
          <dc:title xml:lang="en">Proposal of New Supplying Evaporation Precursor Method with CVD by Using Mixed Solution – Relation between HfO2 Film Surface Condition and Injection Quantity –</dc:title>
          <jpcoar:creator>
            <jpcoar:creatorName>大嶋, 元啓</jpcoar:creatorName>
          </jpcoar:creator>
          <jpcoar:creator>
            <jpcoar:creatorName>千田, 二郎</jpcoar:creatorName>
          </jpcoar:creator>
          <jpcoar:creator>
            <jpcoar:creatorName>石田, 耕三</jpcoar:creatorName>
          </jpcoar:creator>
          <jpcoar:creator>
            <jpcoar:creatorName xml:lang="en">OSHIMA, Motohiro</jpcoar:creatorName>
          </jpcoar:creator>
          <jpcoar:creator>
            <jpcoar:creatorName xml:lang="en">SENDA, Jiro</jpcoar:creatorName>
          </jpcoar:creator>
          <jpcoar:creator>
            <jpcoar:creatorName xml:lang="en">ISHIDA, Kozo</jpcoar:creatorName>
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          <jpcoar:subject subjectScheme="Other">CVD</jpcoar:subject>
          <jpcoar:subject subjectScheme="Other">flash boiling spray</jpcoar:subject>
          <jpcoar:subject subjectScheme="Other">HfO2</jpcoar:subject>
          <jpcoar:subject subjectScheme="Other">SEM</jpcoar:subject>
          <jpcoar:subject subjectScheme="Other">TEMAHf</jpcoar:subject>
          <datacite:description descriptionType="Abstract">The authors proposed a novel chemical vapor deposition system, a new evaporation supply method by using flash boiling spray, to improve several kinds of problems such as decomposition of precursor at supply line and evaporator. In this method, liquid precursors are supplied directly to vacuum chamber thorough an injector without vaporizers. The technique to improve the vaporization of pressure is proposed by mixing a higher saturated vapor pressure organic solvent because the saturated pressure of precursor is very low. In this paper, relation between film surface condition and injection quantity was investigated. Tetraethyl methyl amino hafnium and n-pentane were used as mixed solution, and HfO2 film was deposited on Si substrate by using this method. As a result, the film surface roughness and grain size are increased as increasing injection quantity.</datacite:description>
          <dc:publisher>福井工業大学</dc:publisher>
          <datacite:date dateType="Issued">2010-06-30</datacite:date>
          <dc:language>jpn</dc:language>
          <dc:type rdf:resource="http://purl.org/coar/resource_type/c_6501">departmental bulletin paper</dc:type>
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          <jpcoar:identifier identifierType="DOI">https://doi.org/10.57375/00001026</jpcoar:identifier>
          <jpcoar:identifier identifierType="URI">https://fut.repo.nii.ac.jp/records/1032</jpcoar:identifier>
          <jpcoar:identifierRegistration identifierType="JaLC">10.57375/00001026</jpcoar:identifierRegistration>
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            <jpcoar:relatedIdentifier identifierType="NCID">TF00009485</jpcoar:relatedIdentifier>
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          <jpcoar:sourceTitle>福井工業大学研究紀要</jpcoar:sourceTitle>
          <jpcoar:issue>40</jpcoar:issue>
          <jpcoar:pageStart>125</jpcoar:pageStart>
          <jpcoar:pageEnd>131</jpcoar:pageEnd>
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            <datacite:date dateType="Available">2023-04-12</datacite:date>
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